No assignee for this patent application has been made.
Reporters obtained the following quote from the background information supplied by the inventors: "The present invention relates to a film deposition method and a film deposition apparatus that deposit a reaction product of at least two kinds of reaction gases that react with each other by alternately supplying the gases to the substrate, and more specifically to a film deposition method and a film deposition apparatus appropriate for filling a concave portion formed in a surface of the substrate with the reaction product.
"A process of fabricating a semiconductor integrated circuit (i.e., IC) includes a process of filling a concave portion formed in a surface of a substrate, such as a trench, a via hole, or a space in a line-space pattern, with silicon oxide. For example, as disclosed in Japanese Patent No. 4661990, in filling the concave portion with the silicon oxide, in order to prevent a void from being caused in the silicon oxide film filled in the concave portion, a film deposition method that can deposit the silicon oxide film along the concave portion (in a conformal manner) is preferably adopted.
"In filling the concave portion with the silicon oxide by the film deposition method that can deposit a film in a conformal manner, as the silicon oxide film deposited on both side walls of the concave portion becomes thick, surfaces of the oxide film on the side walls become closer to each other, and eventually contact near the center of the concave portion, by which the concave portion is filled with the silicon oxide film. However, a contact surface (i.e., a seam) where the silicon oxide film on both side walls contacts with each other may separate from each other if the silicon oxide film on the side walls in the concave portion contracts in a heating process performed after the concave portion filling process, and may cause a void within the silicon oxide film. Moreover, in an etching process performed after the concave portion filling process, the etching may be accelerated along the seam, which may cause the void."
In addition to obtaining background information on this patent application, VerticalNews editors also obtained the inventor's summary information for this patent application: "Embodiments of the present invention provide a novel and useful film deposition method and film deposition apparatus solving one or more of the problems discussed above.
"More specifically, the embodiments of the present invention may provide a film deposition method and a film deposition apparatus that can prevent a seam from being formed in filling a concave portion of a substrate with a silicon oxide film.
"According to one embodiment of the present invention, there is provided a film deposition method that includes a step of condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide, and a step of supplying a silicon-containing gas reactable with the hydrogen peroxide to the substrate having the hydrogen peroxide condensed thereon.
"Additional objects and advantages of the embodiments are set forth in part in the description which follows, and in part will become obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
"FIG. 1 is a schematic cross-sectional view illustrating a film deposition apparatus of an embodiment of the present invention;
"FIG. 2 is a schematic perspective view of the film deposition apparatus in FIG. 1;
"FIG. 3 is a schematic top view of the film deposition apparatus in FIG. 1;
"FIG. 4 is a schematic cross-sectional view of the film deposition apparatus in FIG. 1;
"FIG. 5 is partially schematic cross-sectional view of the film deposition apparatus in FIG. 1;
"FIG. 6 is another schematic top view of the film deposition apparatus in FIG. 1;
"FIGS. 7A through 7E are explanation drawings to explain a film deposition method according to an embodiment of the present invention;
"FIGS. 8A and 8B are scanning electron microscopic images showing a result of an experiment performed to confirm an effect of a film deposition method of the present embodiment;
"FIG. 9 is a schematic cross-sectional view illustrating a plasma generator provided in the film deposition apparatus of FIG. 1, preferably to implement a film deposition method according to a modification film deposition method of the present embodiment;
"FIG. 10 is another schematic cross-sectional view illustrating the plasma generator shown in FIG. 9; and
"FIG. 11 is another schematic top view illustrating the plasma generator shown in FIG. 9."
For more information, see this patent application: KATO, Hitoshi. Film Deposition Method and Film Deposition Apparatus. Filed
Keywords for this news article include: Gases, Anions, Patents, Silicon, Elements, Chemistry, Electrolytes, Hydrogen Peroxide, Inorganic Chemicals, Reactive Oxygen Species.
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