News Column

Patent Issued for Centralized Power Gating Control for Partitioned Power Gates

February 5, 2014



By a News Reporter-Staff News Editor at Journal of Engineering -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventor Hegde, Arun B. (Bangalore, IN), filed on November 10, 2011, was published online on January 21, 2014.

The assignee for this patent, patent number 8633751, is Advanced Micro Devices, Inc. (Sunnyvale, CA).

Reporters obtained the following quote from the background information supplied by the inventors: "Integrated circuits use power gating circuitry to temporarily turn-off circuit blocks or modules in order to reduce the overall leakage power. This may be referred to as being in shutdown or sleep mode. The power gating circuitry needs to be turned on in a controlled fashion to minimize the impact of inrush currents into the integrated circuits, where inrush currents occur when coming out of shutdown or sleep modes."

In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventor's summary information for this patent: "Power gating control and related circuitry for integrated circuits is described herein. A centralized power gating control circuit uses trigger circuits to control the on/off switching of power gating circuits distributed at different points in a chip, integrated circuit, module or block, (collectively 'IC'). The power gating circuits may include power gates partitioned for sleep and shutdown modes. The shutdown mode power gates may employ multi-level power gate architecture to minimize inrush current during power-up of the IC. Each level may be associated with, or tied, to a trigger circuit and activated based on a voltage level reaching the voltage threshold of the trigger circuit. The power gating control and related circuitry may be embedded in the IC."

For more information, see this patent: Hegde, Arun B.. Centralized Power Gating Control for Partitioned Power Gates. U.S. Patent Number 8633751, filed November 10, 2011, and published online on January 21, 2014. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=49&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=2426&f=G&l=50&co1=AND&d=PTXT&s1=20140121.PD.&OS=ISD/20140121&RS=ISD/20140121

Keywords for this news article include: Advanced Micro Devices Inc.

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Source: Journal of Engineering


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