"We are pleased to offer this portfolio to our global base of patent buyers. The assets cover solar energy technology relevant to a wide range of sectors and companies, including those that manufacture solar cells, photovoltaic devices and sensors, as well as semiconductor companies focused on display and capacitive touchscreens," says
Key Characteristics & Benefits
With priority dates from 2007, the disclosed portfolio includes (six) US granted patents that broadly cover solar cell technology, including improved power conversion efficiencies. Conventional solar cells that convert the sun's radiant energy into electrical energy using a single semiconductor material with a single depletion region in the P-N junction have limited intrinsic efficiency of ~31%, primarily because no single material can absorb the broad photon ranges of solar radiation. Stacking or connecting a plurality of single P-N junction solar cells of varying bandgaps increases yield, while problems related to incomplete absorption and excess energy loss from un-collected electron-hole pairs due to un-optimized bandgaps persist. Importantly, US 8,039,740 describes a tandem solar cell that includes an alloy (e.g., InGaN or InAlN) forming one P-N junction and a Si P-N junction on the other side of the heterojunction. Effectively, this simple process produces two solar cells with coordinated bandgaps, connected by an ideal tunnel junction.
As disclosed in US 8,232,470, which covers an intermediate band solar cell (IBSC) that includes a P-N junction based on dilute III-V nitride material and a pair of contact blocking layers, the resultant absorber layers have multiple bandgaps and compositionally graded nitrogen concentrations that provide electric fields more conducive to charge collection. Also disclosed is an ultraviolet light sensor made up of a silicon wafer and multiple Nitride layers (e.g., GaN, InGaN, AlGaN, or InAlN) adjacent to the wafer substrate, instead of more expensive wafer materials (e.g., silicon carbide or sapphire wafers), thereby reducing significantly associated manufacturing costs. In addition to use in solar energy, the tandem junction features outlined above could find application in the field of heterogeneous semiconductor integration by integrating nitride semiconductors with silicon based devices.
The assets in the portfolio have been cited by industry leaders such as Samsung, Epv Solar and Scannanotek.
See this technical description of the techniques for Solar Cells & Sensors IP sales offering.
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