By a News Reporter-Staff News Editor at Journal of Engineering -- New research on Thermal Engineering is the subject of a report. According to news reporting out of Hsinchu, Taiwan, by VerticalNews editors, research stated, "Emerging gallium nitride (GaN)-based high electron mobility transistor (HEMT) technology has the potential to make lower loss and higher power switching characteristics than those made using traditional silicon (Si) components. This work designed, developed, and tested an all-GaN-based power module."
Our news journalists obtained a quote from the research from National Chiao Tung University, "In a 200 V, 45 A module, each switching element comprises three GaN chips in parallel, each of which includes six 2.1 A AlGaN/GaN-on-Si HEMT cells. The cells are wire-bonded in parallel to scale up the power rating. Static I-D-V-DS characteristics of the module are experimentally obtained over widely varying base plate temperatures, and a low on-state resistance is obtained at an elevated temperature of 125 degrees C. The fabricated module has a blocking voltage exceeding 200 V at a reverse-leakage current density below 1 mA/mm. Two standard temperature measurements are made to provide a simple means of determining mean cell temperature in the module. Self-heating in AlGaN/GaN HEMTs is studied by electrical analysis and infrared thermography. Electrical analysis provides fast temperature overviews while infrared thermography reveals temperature behavior in selected active regions. The current distribution among cells was acceptable over the measured operating temperature range."
According to the news editors, the research concluded: "The characterization of electrical performance and mechanical performance confirm the potential use of the packaged module for high-power applications."
For more information on this research see: Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module. Applied Thermal Engineering, 2013;61(2):20-27. Applied Thermal Engineering can be contacted at: Pergamon-Elsevier Science Ltd, The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, England. (Elsevier - www.elsevier.com; Applied Thermal Engineering - www.elsevier.com/wps/product/cws_home/630)
Our news journalists report that additional information may be obtained by contacting P.C. Chou, National Chiao Tung University, Dept. of Mech Engn, Hsinchu 30010, Taiwan.
Keywords for this news article include: Asia, Taiwan, Hsinchu, Thermal Engineering
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