By a News Reporter-Staff News Editor at Electronics Newsweekly -- Current study results on Atomic Layer Deposition have been published. According to news reporting originating in Madison, Wisconsin, by VerticalNews journalists, research stated, "We compared the electrical properties of HfO2, HfO2/La2O3, and La-doped HfO2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp)(3) [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively."
The news reporters obtained a quote from the research from the University of Wisconsin, "Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La2O3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid similar to 10(12) cm(-2) eV(-1) range interface states were found for the 400 degrees C-annealed HfO2/La2O3 bilayer sample. These values are significantly better than those of ALD HfO2 gate insulators on Ge."
According to the news reporters, the research concluded: "We attribute this to the formation of LaGeOx layers on the Ge surface, which reduces Ge-O bonding."
For more information on this research see: The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition. Applied Surface Science, 2013;287():349-354. Applied Surface Science can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Applied Surface Science - www.elsevier.com/wps/product/cws_home/505669)
Our news correspondents report that additional information may be obtained by contacting I.K. Oh, University of Wisconsin, Dept. of Mat Sci & Technol, Madison, WI 53706, United States. Additional authors for this research include M.K. Kim, J.S. Lee, C.W. Lee, C. Lansalot-Matras, W. Noh, J. Park, A. Noori, D. Thompson, S. Chu, W.J. Maeng and H. Kim.
Keywords for this news article include: Madison, Wisconsin, Dielectrics, Electronics, United States, Nanotechnology, Emerging Technologies, Atomic Layer Deposition, North and Central America
Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC