technology Launches Asymmetric Dual TrenchFET(R) Gen IV MOSFET in Compact PowerPAIR(R) 3 mm by 3 mm Package -->
The TrenchFET Gen IV technology of the SiZ340DT utilizes a very high-density design to reduce on-resistance without significantly increasing the gate charge, minimizing conduction losses and reducing total power loss for higher power output. As a result, the low-side Channel 2 MOSFET of the SiZ340DT offers a low on-resistance of 5.1 milliohms at a 10 V gate drive and 7.0 milliohms at 4.5 V. The high-side Channel 1 MOSFET features on-resistance of 9.5 milliohms at 10 V and 13.7 milliohms at 4.5 V.
The device released today is optimized for synchronous buck designs in "cloud computing" infrastructures, servers, telecommunication equipment, and various client-side electronic devices and mobile computing applications. The intended DC/DC blocks include system auxiliary power rails in servers, computers, notebook computers, graphic cards, gaming consoles, storage arrays, telecom equipment, DC/DC bricks, and POL converters. The SiZ340DT can also be used in DC/DC conversion circuitry that supplies power to FPGAs.
In these applications, the device maintains a low gate charge of 5.6 nC for the Channel 1 MOSFET and 10.1 nC for
For typical DC/DC topologies with 10 A to 15 A output current and an output voltage below 2 V, the compact 3 mm by 3 mm footprint area of the SiZ340DT saves up to 77 % PCB space compared with using discrete solutions, such as a PowerPAK® 1212-8 MOSFET for the high-side and a PowerPAK SO-8 for the low side. Reducing switching losses, the device allows higher switching frequencies beyond 450 kHz to shrink the PCB size, without sacrificing efficiency, by enabling the use of smaller inductors and capacitors. In addition, by providing higher performance than multiple paralleled previous-generation devices, the MOSFET can potentially reduce the overall component count and simplify designs.
The SiZ340DT is 100 % Rg- and UIS-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.
Samples and production quantities of the SiZ340DT are available now, with lead times of 14 to 16 weeks for large orders.
TrenchFET, PowerPAIR and PowerPAK are registered trademarks of
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