The patent's assignee is
News editors obtained the following quote from the background information supplied by the inventors: "The integration of carbon nano structures such as carbon nanotubes (CNT) as channel materials in the next generation of electronic devices offers many advantages over the continued scaling of silicon (Si). However, one of the leading challenges for CNT devices is the considerable variation in threshold voltage (Vth) and sizable gate hysteresis. Several methods for reducing the hysteresis in CNTFETs have been published. However, these conventional methods generally fail to reduce device hysteresis to an acceptable level and/or increase the thickness of the gate dielectric. Also, some of these conventional methods allow water and other molecules to diffuse through the polymer and adsorb again near the CNT, which negatively affects device operation."
As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "In one embodiment, a method for forming a transistor device is disclosed. The method comprises providing an insulator on a substrate and forming a gate embedded in the insulator. A dielectric material is deposited over the gate and insulator forming a dielectric layer. A channel comprising carbon nanotubes is formed on the dielectric layer over the gate. A self-assembled monolayer is formed over at least the channel.
"Other objects, features, and advantages of the present invention will become apparent from the following detailed description. It should be understood, however, that the detailed description and specific examples, while indicating various embodiments of the present invention, are given by way of illustration only and various modifications may naturally be performed without deviating from the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS
"FIG. 1 is a three-dimensional diagram illustrating an insulator layer having been patterned with a trench that marks the footprint and location of a local bottom gate according to one embodiment of the present invention;
"FIG. 2 is a three-dimensional diagram illustrating a gate material having been deposited into the trench to form a gate according to one embodiment of the present invention;
"FIG. 3 is a three-dimensional diagram illustrating a dielectric layer having been deposited over the insulator and gate according to one embodiment of the present invention;
"FIG. 4 is a three-dimensional diagram illustrating a carbon nanotube channel having been formed on the dielectric layer over the gate and source/drain contacts according to one embodiment of the present invention;
"FIG. 5 is a cross-sectional view of illustrating a self-assembled monolayer having been deposited over the carbon nanotubes and source/drain contacts according to an embodiment of the present invention;
"FIGS. 6-7 are graphs illustrating the I-V curve of four global bottom-gated CNTFETs before and after, respectively, being passivated with hexamethyldisilazane according to one embodiment of the present invention;
"FIG. 8 is a graph illustrating the I-V curve of a single bottom-gated CNTFET before and after being passivated with hexamethyldisilazane according to one embodiment of the present invention;
"FIG. 9 is an operational flow diagram illustrating one process for forming a transistor device; and
"FIG. 10 is a flow diagram of a design process used in semiconductor design, manufacture, and/or test."
For additional information on this patent application, see:
Keywords for this news article include: Fullerenes, Nanotechnology, Carbon Nanotubes, Emerging Technologies,
Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2014, NewsRx LLC
Most Popular Stories
- Obama, Ukraine Discuss Russian Incursion in Crimea
- Chinese May Have Spotted Malaysia Airlines Debris
- Social Media Causee Sleep Deprivation in Students
- First-time Jobless Claims Drop Unexpectedly
- General Electric Plans IPO of Credit Card Unit
- SXSW Crash Kills 2, Injures 23
- U.S. Business Inventories Up, Retail Sales Down
- 'Candy Crush' Maker Files IPO
- Banks Buying Little From Minority Firms: Study
- First-time U.S. Jobless Claims Hit 3-month Low