ENP Newswire -
Release date- 15012014 -
At the nanoscale level, even minor differences in the local atomic configuration can have a major impact on the electrical properties of a device, requiring the first- principles method(1) of calculation to be used to accurately compute physical properties at the atomic level. However, when applying this method to electrical property forecasting, the massive computations involved limit these forecasts to the order of 1,000 atoms.
Expectations are that this development will contribute to faster practical implementations of nano devices. This simulation used massively parallel computing technology developed by the
Details of this technology are being published in the
As silicon devices such as LSI have become increasingly compact, there has been a heightened level of both operating speed and energy-efficiency. In recent years, however, with the limits of miniaturization continuing to draw near, it has become an increasing challenge to squeeze additional performance from chips. This has led to fervent efforts to develop devices made from new materials and new types of structures.
Simulating a nano device's electrical properties accurately on a computer rather than through experimentation can make the development process quicker and less expensive. An effective way to do this is to derive the electrical properties from the first-principles method, which accurately calculates the behavior of each atom.
But as the first-principles method requires a massive amount of calculations, applying it to electrical property forecasting is limited to models on the scale of 1,000 atoms. On this scale, only channel regions - the pathways for electricity - can be calculated. A simulation that would include interactions with thousands of adjacent electrodes and insulators - which are thought to greatly affect electrical properties - has been impossible.
About the Technology
The simulation uses a set of basis functions that represent the flow of electricity. Typically, increasing the number of basis functions enhances the accuracy in approximations of the actual electrical current, but it also boosts the amount of memory used for the computation. A detailed study of these results, from a physical-sciences perspective, led to the discovery of a set of basis functions that holds the required memory to less than the available memory.
In performing the simulations,
This technology, being capable of modeling the electrical properties of a 3,000-atom nano device, was used to discover the electrical properties of a nano device that included interactions with its environment, making a significant step toward the design of new nano devices.
Based on development of ever-more massive parallel computing technology that has kept pace with the performance increase of computers,
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