ENP Newswire -
Release date- 24092013 -
The new memory devices have a density of 4 megabits (Mb) and utilize a fine fabrication process technology with a circuit linewidth of 110 nanometers (nm).
The forthcoming SRAMs are the new series of Advanced LPSRAM and provide high reliability equivalent to that of Renesas' existing
Renesas' low-power SRAMs have achieved widespread adoption in many different fields, including industrial, office, communication, automotive, and consumer products and the company held the No. 1 market share worldwide in such products in 2012 (Note 3). Recently, as manufacturers systems have attained higher performance and more advanced functionality,
Renesas' Advanced LP SRAM has structure in which each memory node (Note 4) within the memory cells hast an added physical capacitor (Note 5), resulting in extremely high endurance against soft error. A general method of dealing with soft error after they occur is the inclusion of an internal error correcting code (ECC) circuit in the
In addition, the
These features enable Advanced LP SRAMs to achieve far higher levels of reliability than full CMOS-type (Note 7) products using a conventional memory cell structure. Advanced LP SRAMs can contribute to even better performance and reliability in applications where a high level of reliability is essential, such as factory automation equipment, measuring devices, equipment employed in smart grids, and transportation systems.
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