By Targeted News Service
ALEXANDRIA, Va., Sept. 20 -- Spansion, Sunnyvale, Calif., has been assigned a patent (8,537,622) developed by Fumiaki Toyama, Fukushima-Ken, Japan, and Yukihiro Utsuno, Fukushima-Ken, Japan, for a "semiconductor device and method for controlling."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device is disclosed. The semiconductor device includes a plurality of memory cells provided in a matrix and having a charge storage layer, a plurality of word lines provided on the charge storage layer, and an application section. When reading data from a selected memory cell selected from the plurality of memory cells, the application section applies a voltage having an opposite polarity to the voltage applied to a selected word line to non-selected word lines arranged on both adjacent sides of the selected word line."
The patent application was filed on Aug. 23, 2011 (13/216,142). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8537622.PN.&OS=PN/8537622&RS=PN/8537622
Written by Kusum Sangma; edited by Anand Kumar.