By Targeted News Service
ALEXANDRIA, Va., Sept. 20 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,537,519) developed by Patrice Besse, Toulouse, France, Stephanie Creveau-Boury, Toulouse, France, and Alexis Huot-Marchand, Labarthe sur Leze, France, for a "semiconductor device and method of electrostatic discharge protection therefor."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device comprises at least one switching element. The at least one switching element comprises a first channel terminal, a second channel terminal and a switching terminal, the switching element being arranged such that an impedance of the switching element between the first and second channel terminals is dependant upon a voltage across the switching terminal and the first channel terminal. The semiconductor device further comprises a resistance element operably coupled between the first channel terminal of the at least one switching element and a reference node, and a clamping structure operably coupled between the switching terminal of the switching element and the reference node. The resistance element and the clamping structure are arranged such that, when current flowing through the at least one switching element, between the first and second channel terminals, exceeds a threshold current value, a voltage drop across the resistance element exceeds a difference between (i) a clamping voltage of the clamping structure and (ii) a switching voltage threshold of the at least one switching element, causing the impedance between the first and second channel terminals of the at least one switching component to increase."
The patent application was filed on June 20, 2008 (12/995,325). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8537519.PN.&OS=PN/8537519&RS=PN/8537519
Written by Kusum Sangma; edited by Anand Kumar.