By Targeted News Service
ALEXANDRIA, Va., Sept. 14 -- Zeno Semiconductor, Cupertino, Calif., has been assigned a patent (8,531,881) developed by Yuniarto Widjaja, San Jose, Calif., for a "memory cells, memory cell arrays, methods of using and methods of making."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "In at least one embodiment, a memory cell includes a substrate having a top surface and a first conductivity type; a first region having a second conductivity type being different from the first conductivity type, the first region being formed in the substrate and exposed at the top surface; a second region having the second conductivity type formed in the substrate, spaced apart from the first region and exposed at the top surface; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer; a gate positioned between the first and second regions and above the top surface; and a nonvolatile memory configured to store data upon transfer from the body region."
The patent application was filed on May 2, 2012 (13/462,702). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,531,881.PN.&OS=PN/8,531,881&RS=PN/8,531,881
Written by Kusum Sangma; edited by Anand Kumar.