Phase-change memory is being actively pursued as an alternative to the flash memory, as flash memory is limited in its storage density and phase-change memory can operate much faster.
A phase-change memory device can be of a size less than 10 nanometers-allowing more memory to be squeezed into tinier spaces.
Zhou and his colleagues studied the material's phase-changing properties, finding that it's more thermally stable than the Ge-Sb-Te compound.
They discovered that Al50Sb50, in particular, has three distinct levels of resistance - and thus the ability to store three bits of data in a single memory cell, instead of just two. This suggests that this material can be used for multilevel data storage.
The study has been published in the journal Applied Physics Letters. (ANI)
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