The news correspondents obtained a quote from the research from the Faculty of Sciences, "By means of a traditional Ritz variational method within the effective-mass approximation and finite potential barrier, the lowest-excited state energy with and without the presence of the impurity is investigated. The normalized binding energy under electric field effect is also performed."
According to the news reporters, the research concluded: "Our numerical results are compared with the previous theoretical findings and show a good agreement with those concerning especially the ground-state for different semiconductors materials and different QDs-shapes."
For more information on this research see: Impurity binding energy of lowest-excited state in (In,Ga)N-GaN spherical QD under electric field effect. Physica B-Condensed Matter, 2013;426():155-157. Physica B-Condensed Matter can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae
Our news journalists report that additional information may be obtained by contacting
Keywords for this news article include: Fez,
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