Patent number 8524603 is assigned to
The following quote was obtained by the news editors from the background information supplied by the inventors: "Generally, semiconductor devices are formed on the front surface of a wafer, therefore the exposed back surface of the wafer is prone to be roughed due to be damaged during the fabricating process of the semiconductor devices.
"As such, it is hard for the wafer to maintain a horizontal attitude when placed on a machine, and thus in the following lithography process the problem of defocusing occurs."
In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventor's summary information for this patent: "A fabricating method of a semiconductor device is provided. First, a substrate having a first surface and a second surface opposite thereto is provided. A shallow trench is formed on the first surface, and a first nitride layer is formed on the second surface. A dielectric layer is formed on the first surface of the substrate to cover the shallow trench. Then, the first nitride layer is removed, and a first protective layer is formed on the second surface of the substrate. After that, a planarization process is performed to remove a portion of the dielectric layer outside the shallow trench.
"In the above method, the nitride layer on the back surface of the substrate is firstly removed and then a protective layer is formed on the back surface prior to forming the STI structure. As such, the back surface is protected by the protective layer from being damaged. In addition, since the nitride layer is removed from the back surface, the thickness evenness of the films formed on the front surface in the following process can be maintained."
URL and more information on this patent, see: Shih, Ting-Chen. Fabricating Method for Semiconductor Device. U.S. Patent Number 8524603, filed
Keywords for this news article include: Semiconductor,
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