The news correspondents obtained a quote from the research, "A micromagnetic finite element tool was then used to simulate the magnetic behavior of the studied nanopillar. The simulations indicated a single-domain like state at remanence, also displaying a sharp transition between parallel/antiparallel free-layer configurations. Overall, the experimentally measured switching fields (H-sw) were smaller than those obtained from simulations. Such trend was consistent with the presence of a particular free layer profile, signature of the two angle etching step used for pillar definition. Further decrease of experimental H-sw was attributed to local defects and thermal activated processes."
According to the news reporters, the research concluded: "This study was able to validate this particular simulation tool for the control of the nanofabrication process."
For more information on this research see: Switching Field Variation in MgO Magnetic Tunnel Junction Nanopillars: Experimental Results and Micromagnetic Simulations. IEEE Transactions on Magnetics, 2013;49(7):4405-4408. IEEE Transactions on Magnetics can be contacted at:
Our news journalists report that additional information may be obtained by contacting
Keywords for this news article include: Braga,
Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2013, NewsRx LLC
Most Popular Stories
- Slow Week Ahead of December FOMC Meeting
- Hispanics Seek to Grow School Board Members
- GM Bailout Saved 1.2 Million U.S. Jobs, Report Says
- Bitcoin Used to Buy Tesla Car
- U.S. Companies Eager for Iranian Business
- 'Knockout Game': Myth or Menace?
- Banks Fret as Volcker Vote Approaches
- Questions Remain in Jenni Rivera's Death
- Yellen Set to Become One of World's Most Powerful Women
- Paul Walker Fans Pay Respects