By Targeted News Service
ALEXANDRIA, Va., Aug. 30 -- Hamilton Sundstrand, Windsor Locks, Conn., has been assigned a patent (8,520,389) developed by Gregory I. Rozman, Rockford, Ill., and Jacek F. Gieras, Glastonbury, Conn., for a "power semiconductor module for wide temperature applications."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A power semiconductor module includes an insulating substrate with a conductive circuit layer attached to one side and a baseplate attached to the other side. A power semiconductor device is attached to the conductive circuit layer. The conductive circuit layer and the baseplate are formed of a material with a coefficient of thermal expansion less than about 8.0.times.10.sup.-6/.degree. C. and a density less than about 4 g/cm.sup.3."
The patent application was filed on Dec. 2, 2009 (12/629,398). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,520,389.PN.&OS=PN/8,520,389&RS=PN/8,520,389
Written by Kusum Sangma; edited by Anand Kumar.