By Targeted News Service
ALEXANDRIA, Va., Aug. 26 -- Qualcomm, San Diego, has been assigned a patent (8,513,089) developed by Arvind Chandrasekaran, San Diego, for a "discontinuous thin semiconductor wafer surface features."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor wafer has a semiconductor substrate and films on the substrate. The substrate and/or the films have at least one etch line creating a discontinuous surface that reduces residual stress in the wafer. Reducing residual stress in the semiconductor wafer reduces warpage of the wafer when the wafer is thin. Additionally, isolation plugs may be used to fill a portion of the etch lines to prevent shorting of the layers."
The patent application was filed on Nov. 19, 2012 (13/681,412). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,513,089.PN.&OS=PN/8,513,089&RS=PN/8,513,089
Written by Kusum Sangma; edited by Anand Kumar.