By Targeted News Service
ALEXANDRIA, Va., Aug. 26 -- Advanced Analogic Technologies, Santa Clara, Calif., has been assigned a patent (8,513,087) developed by Donald R. Disney, Cupertino, Calif., and Richard K. Williams, Cupertino, Calif., for "processes for forming isolation structures for integrated circuit devices."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Processes for forming isolation structures for semiconductor devices include forming a submerged floor isolation region and a filed trench which together enclose an isolated pocket of the substrate. One process aligns the trench to the floor isolation region. In another process a second, narrower trench is formed in the isolated pocket and filled with a dielectric material while the dielectric material is deposited so as to line the walls and floor of the first trench. The substrate does not contain an epitaxial layer, thereby overcoming the many problems associated with fabricating the same."
The patent application was filed on April 27, 2011 (13/095,019). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,513,087.PN.&OS=PN/8,513,087&RS=PN/8,513,087
Written by Kusum Sangma; edited by Anand Kumar.