The patent's assignee for patent application serial number 705151 is
News editors obtained the following quote from the background information supplied by the inventors: "The invention generally relates to a thin film transistor (TFT), and more particularly, to a TFT with an Ohmic strengthening layer.
"Thanks to the progresses of semiconductor device and display device, the multimedia technology gets quite developed today. In terms of displays, the thin film transistor liquid crystal display (TFT LCD), due to its superior features of high image-quality, good space utilization, low power consumption and no radiation, has gradually played a major role on the display market. Along with more and more popular applications of the TFT LCD products (such as TV set, mobile phone, digital camera, laptop computer, and so on), these devices have gradually increased impact on our daily life.
"However, in response to the energy-saving demand today, how to further reduce the power consumption of a TFT LCD through changing and improving the semiconductor devices in the TFT LCD meanwhile keeping high image-quality and high performance has become the development trend for the future. In order to reduce the power consumption, some schemes to improve the Ohmic contact resistance of the semiconductor layer and the source (or the drain) of a TFT have been provided today. For example, in the related art, there is a scheme of reducing the Ohmic contact resistance by disposing an Ohmic contact layer on the contact surfaces of the semiconductor layer and the source (or the drain). However, the above-mentioned improvement is still limited, and the effect of improving the power consumption at the present stage is going on."
As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "Accordingly, the invention is directed to a TFT with low power consumption.
"An embodiment of the invention provides a TFT, which includes a gate, a semiconductor layer, an insulation layer, a source and a drain. The semiconductor layer has a first end and a second end opposite to the first end. The insulation layer is disposed between the gate and the semiconductor layer. The source clamps the first end of the semiconductor layer and the drain clamps the second end of the semiconductor layer.
"Based on the description above, the TFT of an embodiment of the invention can utilizes the source and the drain to respectively clamp both ends of the semiconductor layer to accomplish Ohmic contacts so as to increase the Ohmic contact area, thereby effectively reducing the operation voltage and the power consumption.
BRIEF DESCRIPTION OF THE DRAWINGS
"The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
"FIG. 1 is a schematic cross-sectional diagram of a TFT according to an embodiment of the invention.
"FIG. 2 is a schematic cross-sectional diagram of a TFT according to another embodiment of the invention."
For additional information on this patent application, see: Wang, Henry; Yeh, Chia-Chun; Tsai, Xue-Hung; Shinn, Ted-Hong. Thin Film Transistor. U.S. Patent Application Serial Number 705151, filed
Keywords for this news article include: Electronics, Semiconductor,
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