The assignee for this patent, patent number 8508014, is
Reporters obtained the following quote from the background information supplied by the inventors: "The present invention relates to a solid-state image sensor and an imaging device.
"Currently, the configuration of solid-state image sensors of a photoelectric conversion layer stacking type in which a photoelectric conversion layer including an organic material or the like that generates an electric charge in accordance with incident light is disposed on the upper side of a semiconductor substrate is proposed. According to this configuration, by disposing the photoelectric conversion layer having high photoelectric conversion efficiency in the upper portion of a read-out circuit such as a CMOS, a decrease in the thickness, a high aperture ratio, and high sensitivity of the imaging device may be achieved, which implements superior characteristics. These solid-state image sensors have appropriate characteristics for a miniaturized camera such as a camera phone module, which implements superior characteristics."
In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventor's summary information for this patent: "According to an aspect of the invention, a solid-state image sensor having a plurality of pixels includes a plurality of lower electrode, a photoelectric conversion layer, an upper electrode, a wiring portion and a plurality of connection portions. The plurality of lower electrodes respectively corresponds to the plurality of pixels. The photoelectric conversion layer is stacked on the lower electrodes. The upper electrode is stacked on the photoelectric conversion layer. The wiring portion supplies, to the upper electrode, a voltage to generate an electric field between the upper electrode and the lower electrode. The plurality of connection portions connects the wiring portion and the upper electrode. The plurality of connection portions are disposed in a circumference region which is a region other than a sensor region in which a plurality of photoelectric conversion elements are arranged. Each of the photoelectric conversion elements includes one of the lower electrodes, a part of the photoelectric conversion layer corresponding to the one of the lower electrodes and a part of the upper electrode corresponding to the one of the lower electrodes. The plurality of connection portions is disposed in a symmetrical arrangement with respect to the sensor region. The sensor region is located in a center face region of the photoelectric conversion layer."
For more information, see this patent:
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