The patent's assignee for patent application serial number 762983 is
News editors obtained the following quote from the background information supplied by the inventors: "A light emitting diode (LED), a semiconductor light emitting device, is a photoelectric device capable of generating various colors of light through the recombination of electrons and holes at a p-n junction by using p-n junction structure characteristics. That is, when a forward directional voltage is applied to a specific element of a semiconductor, electrons and holes are recombined while the electrons and holes move through a junction between an anode and a cathode. Since an amount of energy in the recombined electrons and holes is smaller than an amount of energy in electrons and holes separated from one another, light is emitted to the outside of the LED due to the energy difference.
"The device as described above may be provided in a state in which a growth substrate used for the growth of a semiconductor layer has been removed in order to secure a wide light emitting region and allow current applied thereto to flow uniformly throughout the overall region of the device, or the like. In order to remove a growth substrate, a method in which a support substrate is attached to a light emitting structure and a laser beam or the like is then irradiated thereonto is used. In this process, a large amount of stress acts on the light emitting structure, caused due to differences in thermal expansion coefficients between the growth substrate, a semiconductor layer and the support substrate. As such, a defect, e.g., cracks, may occur due to the stress acting on the semiconductor layer in the process of removing the growth substrate. Thus, light emission efficiency in the device may be degraded. In particular, this defect may further increase as the size of a wafer increases. Accordingly, research on a scheme for significantly reducing an influence of a difference in thermal expansion coefficients when a growth substrate is eliminated in the art has been under way."
As a supplement to the background information on this patent application, VerticalNews correspondents also obtained the inventors' summary information for this patent application: "An aspect of the present inventive concept relates to a method of manufacturing a semiconductor light emitting device, capable of significantly reducing stress influencing a semiconductor layer by omitting a growth substrate, thereby reducing an occurrence of cracks.
"An aspect of the present inventive concept encompasses a method of manufacturing a semiconductor light emitting device. The method includes forming a light emitting structure on a growth substrate such that the light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.
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