By a News Reporter-Staff News Editor at Life Science Weekly -- Fresh data on Nanoparticles are presented in a new report. According to news reporting from Hsinchu, Taiwan, by NewsRx journalists, research stated, "Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO2) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question."
The news correspondents obtained a quote from the research from National Tsing Hua University, "In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO2 films. Our spectral data show that the peak position, at similar to 3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeOx upon ion implantation. Since decreasing of the oxygen-related defects by the GeOx formation is expected to be correlated with the annealing temperature, presence of the GeOx renders further experimental support to the oxygen defect mechanism."
According to the news reporters, the research concluded: "This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications."
For more information on this research see: Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2013;307():171-176. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands (see also Nanoparticles).
Our news journalists report that additional information may be obtained by contacting C.F. Yu, Natl Tsing Hua Univ, Inst Nucl Engn & Sci, Hsinchu 300, Taiwan. Additional authors for this research include D.S. Chao, Y.F. Chen and J.H. Liang.
Keywords for this news article include: Asia, Taiwan, Hsinchu, Chalcogens, Nanotechnology, Emerging Technologies
Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2013, NewsRx LLC