The patent's inventors are Nagai, Noriyuki (Nara, JP); Hagihara, Kiyomi (
This patent was filed on
From the background information supplied by the inventors, news correspondents obtained the following quote: "The present disclosure relates to semiconductor devices, and packages including the semiconductor devices.
"Conventional semiconductor devices mounted on mount substrates of various types of electronic equipment will be described below (see, for example, Japanese Patent Publication No. 2005-235905).
"A conventional semiconductor device includes a semiconductor chip having a low dielectric constant insulating film as an interlayer insulating film, first electrode pads provided on the semiconductor chip, and bump electrodes formed on the first electrode pads with barrier metals interposed therebetween. The barrier metal is 0.1 .mu.m-3 .mu.m in thickness. In the conventional semiconductor device, the thickness of the barrier metal is 0.1 .mu.m-3 .mu.m. This reduces intensive application of stress derived from a difference in thermal expansion coefficient between the semiconductor chip and the mount substrate to the low dielectric constant insulating film in mounting the semiconductor device on the mount substrate. Thus, cracking of the low dielectric constant insulating film, and peeling of a film formed on the low dielectric constant insulating film off the low dielectric constant insulating film at an interface therebetween are less likely to occur."
Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "The inventors of the present disclosure have found the followings as a result of various studies.
"When the barrier metal is formed by electrolytic plating etc., for example, the barrier metal contracts during the formation thereof, and the formed barrier metal causes tensile stress. Accordingly, the interlayer insulating film may be cracked, and/or a film formed on the interlayer insulating film may be peeled off the interlayer insulating film at an interface therebetween.
"In view of the foregoing, the present disclosure provides a semiconductor device in which the cracking of the interlayer insulating film is prevented, and the peeling of the film formed on the interlayer insulating film off the interlayer insulating film at the interface therebetween is prevented, even when the barrier metal causes the tensile stress.
"An example semiconductor device includes: a semiconductor substrate; an interlayer insulating film formed on the semiconductor substrate; an electrode pad formed on the interlayer insulating film; a protective film which is formed on the interlayer insulating film to cover a peripheral portion of the electrode pad, and has a first opening which exposes a center portion of the electrode pad; a divider which is formed on the electrode pad exposed from the first opening, and divides the first opening into a plurality of second openings; and a barrier metal formed on the protective film to fill the second openings, wherein the divider is interposed between the electrode pad and the barrier metal.
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