The assignee for this patent, patent number 8507388, is
Reporters obtained the following quote from the background information supplied by the inventors: "This application relates generally to semiconductor fabrication and, more particularly, to preventing oxidation of substrate surfaces in a process chamber.
"Semiconductor device fabrication is a complex process. Electronic devices are typically formed on a semiconductor substrate, and often include conductive elements separated by insulating elements. Conductive elements may serve as, e.g., electrodes and interconnecting conductors.
"As an example, various electronic devices, such as transistor devices, exist in the modern day fabrication of integrated circuits, with metal-oxide-semiconductor field-effect transistors (MOSFET) being a common transistor device. Generally, a MOSFET includes a conductive gate electrode formed over a gate dielectric, which in turn overlies a semiconductor substrate that can be single-crystal silicon. For reliable performance in electronic devices, such as a MOSFET, it is desirable to maintain the conductivity of the conductive parts, such as a gate electrode, which may be composed of such conductive materials as metals or metal nitrides. Similar considerations apply for other materials relied upon for their conductivity.
"Accordingly, there is continuing need for processes that provide conductive materials having high conductivity or low resistivity."
In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "According to some embodiments of the invention, a method for thermal processing of substrates is provided. The method comprises providing a reducing gas ambient in a process chamber by flowing a reducing gas into the chamber prior to loading one or more substrates into the chamber. The substrates are loaded into the reducing gas ambient in the chamber while the chamber is at a loading temperature. The substrates are processed at a process temperature.
"According to some other embodiments of the invention, a method for thermal processing of substrates is provided. The method comprises providing a reducing gas ambient in a process chamber by flowing a reducing gas into the chamber prior to loading one or more substrates into the chamber. The substrates are loaded into the reducing gas ambient in the chamber while the chamber is at a loading temperature. The substrates and the chamber are heated so that the substrates are heated to a process temperature. The substrates are processed at the process temperature. The chamber is cooled to an unloading temperature. The substrates are unloaded while the chamber is at the unloading temperature.
"According to other embodiments of the invention, a method for substrate processing is provided. A first material is deposited on a substrate in a first process chamber. The substrate is unloading from the first process chamber. The substrate is subsequently loaded into a second process chamber. A second material is deposited on the substrate in the process chamber. A reducing ambient is provided in the second process chamber during subsequently loading the substrate into the second process chamber."
For more information, see this patent:
Keywords for this news article include: Electronics, Semiconductor,
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