The assignee for this patent, patent number 8487327, is
Reporters obtained the following quote from the background information supplied by the inventors: "The present invention relates to a III-nitride semiconductor device, an epitaxial substrate, and a method for fabricating the III-nitride semiconductor device.
"Non Patent Literature 1 discloses the effect of miscut in m-plane GaN substrates. The investigation was carried out using (1-100)-plane GaN substrates having miscut angles formed toward the [000-1] direction. The miscut angles were 0.45 degrees, 0.75 degrees, 5.4 degrees and 9.6 degrees. The surface morphology was improved with increase in miscut angle.
"Non Patent Literature 2 discloses pyramidal hillocks on m-plane GaN. The hillocks are reduced with change in miscut angle ranging from zero degrees to 10 degrees in the direction from the a-axis to c.sup.--axis.
"Non Patent Literature 3 discloses inclination of a crystal axis of a GaN substrate in optical properties of InGaN/GaN light emitting diodes produced on m-plane GaN substrates.
"Non Patent Literature 4 describes an InGaN/GaN quantum well structure grown on semipolar (11-22)-plane GaN substrates. Non Patent Literature 1:
In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "In a GaN film epitaxially grown on the semipolar GaN surface of a Group III GaN-based semiconductor substrate such as GaN, the surface morphology thereof is not good. According to Inventors' knowledge, the epitaxial growth on semipolar GaN-based semiconductors exhibits a complexion different from the growth on crystal planes of plane orientations such as c-plane, m-plane and a-plane.
"According to Inventors' experiment, relatively large depressions such as pits appear in the surface morphology of the epitaxial film on the semipolar GaN-based semiconductor. The pits in the semipolar plane have a shape different from that of pits in a c-plane. The pits in the semipolar surface of the epitaxial film have a asymmetric shape, and the shape of the openings is horizontally long or vertically long and their aspect ratios are large. Hence, the pits in the semipolar surface affect a large area in the surface of the epitaxial film.
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