By a News Reporter-Staff News Editor at Science Letter -- Researchers detail new data in Science. According to news originating from Yantai, People's Republic of China, by NewsRx correspondents, research stated, "InxGa1-xAs is a perfect III-V compound semiconductor for the photoemissivelayer of the infrared-extension negative electron affinity photocathode. The InxGa1-xAs used as photoemissivelayer has a better lattice match with InP used as the substrate of the photocathode when the In component is 0.53."
Our news journalists obtained a quote from the research from Ludong University, "The electron structure, formation energy, work function and the optical properties of the In0.53Ga0.47As (1 0 0) beta 2 (2 x 4) surface, which are closely related with the photocathode emission properties according to the photocathode formation mechanism, are calculated and analyzed in this article. The changes including the decrease of the energy gap and the appearance of the new energy bands happen to the surface energy bands due to the reconstruction of the surface atoms. The surface work function of In0.53Ga0.47As (1 0 0) beta 2 (2 x 4) surface which is sensitive to the near-infrared light is 4.274 eV. It is less than that of the GaAs (1 0 0) beta 2 (2 x 4) surface which is sensitive to the visible light. The absorption coefficient is studied a lot among the optical properties. The results show that the surface absorption coefficient is obviously bigger than that in the In0.53Ga0.47As bulk in the low energy region."
According to the news editors, the research concluded: "Hence the In0.53Ga0.47As (1 0 0) beta 2 (2 x 4) surface is benefit for the formation of the negative electron affinity photocathode, which offers effective theoretical foundation for the photocathode structure design."
For more information on this research see: Theoretical study on electronic and optical properties of In0.53Ga0.47As (100) beta 2 (2 x 4) surface. Applied Surface Science, 2013;288():238-243. Applied Surface Science can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Applied Surface Science - www.elsevier.com/wps/product/cws_home/505669)
The news correspondents report that additional information may be obtained from J. Guo, Ludong Univ, Sch Phys, Yantai 264025, People's Republic of China. Additional authors for this research include B.K. Chang, M.C. Jin, M.Z. Yang, H.G. Wang, M.S. Wang, J.C. Huang, L. Zhou and Y.J. Zhang (see also Science).
Keywords for this news article include: Asia, Yantai, Science, People's Republic of China
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