ENP Newswire -
Release date- 08102013 -
In recent years, to enhance the resolution of radar and expand the capacity of wireless communications, efforts have been focused on developing transceivers operating in the millimeter-band frequency range above 30 GHz. To raise the performance of millimeter-band transceivers and be able to produce them in mass quantities, it is necessary to use silicon-based semiconductors rather than the compound semiconductors(4) that have been used up until now. The problem, however, has been the difficulty of generating low-noise signals in the millimeter band.
This technology is expected to make a significant contribution to raising the performance - and enabling the mass production - of automotive radars and other millimeter-band transceivers. A portion of these results were obtained through 'Advanced Research on 79GHz-band Radar Systems,' a research program commissioned by
Details on this technology will be announced at the
In recent years, to enhance the resolution of radar and expand the capacity of wireless communications, efforts have been focused on developing transceivers operating in the millimeter-band frequency range above 30 GHz. For the high frequency integrated circuits (ICs) used to send and receive millimeter-band signals, compound semiconductors, whose physical properties are well-suited to high frequency applications, are being used. To integrate the features of a signal-processing circuit on a single chip, raise its level of performance, and enable it to be mass manufactured, however, silicon is more suitable than compound semiconductors. That is why research efforts have focused on creating millimeter-band transceiver ICs using silicon semiconductors.
Figure 1. Structure of a millimeter-band transceiver IC implemented using a compound semiconductor
Figure 2. Structure of a high-performance millimeter-band transceiver IC implemented using a silicon semiconductor
Millimeter-band transceiver ICs need a signal-generating circuit to generate millimeter-band signals. Conventional millimeter-band signal-generating circuits compare the low frequency comparator signals, which are divided from the frequency of millimeter-band oscillator signals, to the low-noise, highly stable reference signals from the reference oscillator. They then synchronize these two signals to generate low-noise, highly stable signals (Figure 3). Because the reference signal and comparator signal share the same frequency and a comparison is made one time for each cycle of the reference signal, the phase difference signal of the comparison results cannot be made sufficiently large compared to the noise generated from the phase difference detection circuits, and results in the problem of high levels of noise. In particular, because the level of noise generated by the transistors made of silicon semiconductors is high compared to that of compound semiconductors, there has been a need for circuit technology that generates low-noise and highly stable millimeter-band signals.
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