Our news journalists obtained a quote from the research from Forschungszentrum Julich, "For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p-n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness."
According to the news editors, the research concluded: "The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices."
For more information on this research see: Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography. Ultramicroscopy, 2013;134():160-166. Ultramicroscopy can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae
Our news journalists report that additional information may be obtained by contacting
Keywords for this news article include: Julich,
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