Patent number 8558349 is assigned to
The following quote was obtained by the news editors from the background information supplied by the inventors: "The present invention relates in general to an integrated circuit, and more particularly to an integrated circuit for a high-side transistor driver.
"A variety of power supplies and motor drivers utilize the bridge circuits to control a power source to the load. The bridge circuit normally has a high side transistor connected to the power source and a low side transistor connected to the ground. A common node between the high side transistor and the low-side transistor is coupled to the load. As transistors are controlled to alternately conduct, the voltage of the common node swings in between the power source and the ground. Therefore the control of a high-side transistor driver requires a charge pump circuit and/or a floating drive circuit in order to fully turn on the high-side transistor. In recent development, many floating circuits are being disclosed in U.S. Pat. No. 6,344,959 (Milazzo), U.S. Pat. No. 6,781,422 (Yang) and U.S. Pat. No. 6,836,173 (Yang).
"FIG. 1 shows a high-side transistor drive circuit. A floating circuit 10 is applied to control the on/off of the high-side transistor 20. A feeding capacitor 15 is connected to send the control signal S1 from a low-voltage inverter 16 to the floating circuit 10. A charge-pump capacitor 40 provides a supply voltage to the floating circuit 10. A voltage V.sub.D charges the charge-pump capacitor 40 through a diode 45 once the low-side transistor 30 is switched on. The ground reference of the charge-pump capacitor 40 is pulled to the level of the voltage source VIN when the high-side transistor 20 is turned on."
In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "Accordingly, an objective of the present invention is to provide a monolithic IC process to integrate low-voltage control circuits with a high-voltage floating drive circuit. Furthermore, the integration is achieved by using a typical IC process, so as to accomplish the low cost and high production yield.
"A high voltage integrated circuit comprises a P substrate. An N diffusion region containing N conductivity type forms a deep N well disposed in the P substrate. Separated P diffusion regions containing the P conductivity type form P wells disposed in the P substrate and the deep N well for the isolation. The low voltage control circuit is located outside the deep N well. A floating circuit is located inside the deep N well. A high voltage junction barrier is thus formed isolating the control circuit from the floating circuit. Furthermore, a capacitor is disposed above the portion of the deep N well for feeding the control signal from the low-voltage control circuit to the floating circuit.
"It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed."
URL and more information on this patent, see: Chiang, Chiu-Chih; Huang, Chih-Feng; Yang, Ta-yung. Integrated Circuit for a High-Side Transistor Driver. U.S. Patent Number 8558349, filed
Keywords for this news article include: Electronics, High Voltage,
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