By a News Reporter-Staff News Editor at Electronics Newsweekly -- Fresh data on Organic Electronics are presented in a new report. According to news reporting originating from Glasgow, United Kingdom, by VerticalNews correspondents, research stated, "N-octylphosphonic acid (C(8)PA) monolayer was self-assembled on aluminum oxide (AlOx) from vapor in vacuum, while the substrate temperature was varied between 25 and 150 degrees C. The capacitance, water contact angle measurement, Fourier transform infrared (FTIR) spectroscopy, and atomic force microscopy (AFM) confirmed the presence of C(8)PA on AlOx for all growth temperatures. However, the structural and electrical properties of such monolayers depend on their growth temperature."
Our news editors obtained a quote from the research from the University of Strathclyde, "The minimum surface roughness of 0.36 nm, the maximum water contact angle of 113.5 degrees +/- 1.4 degrees, the lowest leakage current density of similar to 10 (7) A/cm(2) at 3 V, and the capacitance of 0.43 mu F/cm(2) were obtained for AlOx/C(8)PA bi-layers with C(8)PA deposited at 25 degrees C. The elevated temperature led to increased surface roughness, decreased water contact angle, increased leakage current, inferior molecular ordering, and lower molecular coverage; while the effect on the chemisorption of the phosphonate was minimal. Methyl and methylene FTIR vibrations associated with C(8)PA aliphatic tails exhibited similar centre-peak wavenumbers to those observed for C(8)PA monolayers assembled from solutions, presenting a viable 'dry' alternative to the existing solution process. The substrate temperature applied during C(8)PA self-assembly also affected the parameters of pentacene thin-film transistors with AlOx/C(8)PA gate dielectrics."
According to the news editors, the research concluded: "The increase in the growth temperature from 25 to 150 degrees C decreased the field-effect mobility from 0.060 to 0.026 cm(2)/V.s and increased the threshold voltage from -1.19 to -1.38 V, while maintaining the off-current at or below 10 (12) A and the subthreshold slope near 90 mV/decade."
For more information on this research see: Effect of substrate temperature on vapor-phase self-assembly of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors. Organic Electronics, 2013;14(10):2468-2475. Organic Electronics can be contacted at: Elsevier Science Bv, PO Box 211, 1000 Ae Amsterdam, Netherlands. (Elsevier - www.elsevier.com; Organic Electronics - www.elsevier.com/wps/product/cws_home/620806)
The news editors report that additional information may be obtained by contacting S. Gupta, University of Strathclyde, Strathclyde Inst Pharm & Biomed Sci, Glasgow G4 0RE, Lanark, United Kingdom. Additional authors for this research include P. Sutta, D.A. Lamprou and H. Gleskova.
Keywords for this news article include: Europe, Glasgow, United Kingdom, Organic Electronics
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