The news correspondents obtained a quote from the research, "High-resolution cross-section images of the coherent InSb QDs buried into the InAs(Sb, P) matrix were obtained by transmission electron microscopy. It was experimentally demonstrated that self-assembled InSb QDs can be formed on InAs-rich surface in Stranski-Krastanow mode."
According to the news reporters, the research concluded: "The optimal thickness of the wetting layer was dependent on matrix surface chemistry: 2 nm-thick for the binary InAs surface and 1.3 nm-thick for the quaternary InAsSbP one were found."
For more information on this research see: Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix.
Our news journalists report that additional information may be obtained by contacting
Keywords for this news article include:
Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2013, NewsRx LLC
Most Popular Stories
- 5 Potential Snags to the Bipartisan Budget Deal
- Adam Levine Wins Big as 'The Voice' Crowns Champ
- Archer Daniels Midland Moving HQ to Chicago
- From Fiscal Cliff to Female Head of GM: 2013 in Review
- U.S. Home Construction Hammers Out 5-Year High
- Budget Deal on Brink of Passing in Senate
- Broadband Policies Could Mean 11,000 Jobs
- William Morris Endeavor Eats up IMG
- Wine Collector Convicted of Making Fake Vintages
- Apple: Disney Animation iPad App Best of 2013